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| FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench(R) MOSFET March 2008 FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench(R) MOSFET -20V, -4.9A, 46m Features Max rDS(on) = 46m at VGS = -4.5V, ID = -4.9A Max rDS(on) = 69m at VGS = -2.5V, ID = -4.0A Low gate charge (11nC typical). High performance trench technology for extremely low rDS(on). HBM ESD protection level >3kV (Note 3). RoHS Compliant tm General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench(R) process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits. Applications Battery Charging Load Switching D2 D2 D1 D1 G2 S2 G1 Pin 1 SO-8 S1 D1 8 D2 D2 D1 5 6 7 Q2 Q1 Q2 Q1 4 3 2 1 G2 S2 G1 S1 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) TA = 25C (Note 1a) Ratings -20 12 -4.9 -30 1.6 0.9 -55 to +150 Units V V A W C Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 40 78 C/W Package Marking and Ordering Information Device Marking FDS9933BZ Device FDS9933BZ Package SO-8 Reel Size 330mm Tape Width 12mm Quantity 2500 units (c)2008 Fairchild Semiconductor Corporation FDS9933BZ Rev.C 1 www.fairchildsemi.com FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250A, VGS = 0V ID = -250A, referenced to 25C VDS = -16V, VGS = 0V VGS = 12V, VDS = 0V -20 -9 1 10 V mV/C A A On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = -250A ID = -250A, referenced to 25C VGS = -4.5V, ID = -4.9A VGS = -2.5V, ID = -4.0A VGS = -4.5V, ID = -4.9A, TJ = 125C VDD = -10V, ID = -4.9A -0.4 -0.9 3 38 54 52 17 46 69 67 S m -1.5 V mV/C Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -10V, VGS = 0V, f = 1MHz 740 160 145 985 215 220 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge VDD = -10V, ID = -4.9A VGS = -4.5V VDD = -10V, ID = -4.9A, VGS = -4.5V, RGEN = 6 6.7 9.3 59 47 11 1.4 3.7 14 19 95 76 15 ns ns ns ns nC nC nC Drain-Source Diode Characteristics IS VSD trr Qrr Maximum continuous Drain-Sourse Diode Forward Current Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = -1.3A (Note 2) -0.8 46 23 -1.3 -1.2 74 37 A V ns nC IF = -4.9A, di/dt = 100A/s NOTES: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78C/W when mounted on a 1 in2 pad of 2 oz copper b) 135C/W when mounted on a minimun pad 2. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. (c)2008 Fairchild Semiconductor Corporation FDS9933BZ Rev.C 2 www.fairchildsemi.com FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 30 VGS = -4.5V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3.0 VGS = -3V VGS = -3.5V 25 -ID, DRAIN CURRENT (A) 2.5 2.0 1.5 1.0 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = -2V 20 15 10 5 0 0 1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = -2V VGS = -2.5V VGS = -2.5V VGS = -3V VGS = -3.5V VGS = -4.5V 0.5 0 5 10 15 20 25 30 -ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 250 SOURCE ON-RESISTANCE (m) 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID = -4.9A VGS = -4.5V 1.4 rDS(on), DRAIN TO 200 150 100 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX ID = -4.9A 1.2 1.0 0.8 0.6 -75 TJ = 125oC 50 TJ = 25oC -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 30 25 -ID, DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX -IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 100 VGS = 0V 10 1 TJ = 150oC 20 15 10 5 0 0.5 VDS = -5.0V 0.1 0.01 1E-3 0.0 TJ = 25oC TJ = 150oC TJ = 25oC TJ = -55oC TJ = -55oC 1.0 1.5 2.0 2.5 3.0 3.5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2008 Fairchild Semiconductor Corporation FDS9933BZ Rev.C 3 www.fairchildsemi.com FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 4.5 -VGS, GATE TO SOURCE VOLTAGE(V) 4.0 3.5 ID = -4.9A 3000 2.5 2.0 1.5 1.0 0.5 0.0 0 2 4 6 8 VDD = -10V CAPACITANCE (pF) 3.0 VDD = -5V 1000 Ciss Coss VDD = -15V 100 Crss f = 1MHz VGS = 0V 10 12 Qg, GATE CHARGE(nC) 10 0.1 1 -VDS, DRAIN TO SOURCE VOLTAGE (V) 10 20 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 10 -Ig, GATE LEAKAGE CURRENT(A) 5 4 3 2 1 0 10 8 -IAS, AVALANCHE CURRENT(A) 10 10 10 10 10 10 10 10 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 6 4 TJ = 25oC TJ = 125oC VGS = 0V TJ = 125oC -1 -2 -3 -4 2 TJ = 25oC 1 0.01 0.1 1 10 30 10 0 4 8 12 16 tAV, TIME IN AVALANCHE(ms) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Unclamped Inductive Switching Capability 50 Figure 10. Gate Leakage Current vs Gate to Sourse Voltage 100 P(PK), PEAK TRANSIENT POWER (W) VGS = -10V -ID, DRAIN CURRENT (A) 10 100s 1ms 1 THIS AREA IS LIMITED BY rDS(on) 10ms 100ms 1s 10s DC 10 0.1 SINGLE PULSE TJ = MAX RATED RJA = 135oC/W TA = 25oC 1 0.5 -3 10 SINGLE PULSE RJA = 135oC/W TA = 25oC 0.01 0.1 1 10 50 -VDS, DRAIN to SOURCE VOLTAGE (V) 10 -2 10 -1 10 0 10 1 100 1000 t, PULSE WIDTH (s) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation (c)2008 Fairchild Semiconductor Corporation FDS9933BZ Rev.C 4 www.fairchildsemi.com FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER 1 NORMALIZED THERMAL IMPEDANCE, ZJA 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA+ TA SINGLE PULSE RJA = 135 C/W o 0.01 -3 10 10 -2 10 -1 10 0 10 1 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve (c)2008 Fairchild Semiconductor Corporation FDS9933BZ Rev.C 5 www.fairchildsemi.com FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * tm FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PDP-SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SuperMOSTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production (c)2008 Fairchild Semiconductor Corporation FDS9933BZ Rev.C www.fairchildsemi.com |
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